bias resistor t ransistor pnp silicon surface mount t ransistor with monolithic bias resistor network device marking and resistor values device marking r1 (k) r2 (k) shipping o7 47 3000/tape & reel leshan radio company, ltd. 1/3 ? 10000/tape & reel we declare that the material of product compliance with rohs requirements. ldta144tet1g 1 ) b u i l t- in b i as res i st ors e n a b l e th e co nfi g ur ati on of a n in ve rte r circui t w i thou t con n e cting ex te rn al in pu t resistors (see equivalent circuit). 2 ) t he bi as r e s i sto r s c o n s ist of th i n -fi l m r e s i sto r s w i t h co mp le te i s ol a t i o n to al low posi t i v e bia s ing o f the i npu t. t h ey a l so ha ve the ad van t age of a l mo st co mpl e tely eliminating p a rasitic ef fect s. 3 ) o n l y th e on/ of f co n d it i ons n e ed to be set for o p e r a t i on, making the device design easy . inverter , interface, driver features ? ? applications ldta144tet1g ldta144tet3g o7 47 z a b solute maximum ratings (t a= 25 c) z electrical ch aracteristics (t a= 25 c) 1 2 3 sc-89 3 collec t or 2 emitter 1 base r1 limits parameter symbol unit v cbo ? 50 ? 50 ? 5 ? 100 200 150 ? 55 to + 150 v v ma mw c c v ceo v ebo i c pc tj tstg collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature v parameter symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce(sat) r 1 f t min. ? 50 ? 50 ? 5 ? ? 100 ? 32.9 ? ? i c = ? 50 a i c = ? 1ma i e = ? 50 a v cb = ? 50v v eb = ? 4v v ce = ? 5v, i c = ? 1ma i c /i b = ? 5ma/ ? 0.5ma v ce = ? 10v, i e = 5ma, f = 100mhz ? ? ? ? ? ? 250 ? 47 250 typ. ? ? ? ? 0.5 ? 0.5 600 ? 0.3 61.1 ? max. v v v a a ? v k ? mhz unit conditions collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio collector-emitter saturation voltage input resistance transition frequency ? characteristics of built-in transistor
leshan radio company, ltd. 2/3 z electrical ch aracteristic cu rv es ldta144tet1g v ce =? 5v ? 100 ? 1m ? 10m ? 200 ? 2m ? 20m ? 500 ? 5m ? 50m ? 100m 1k 500 200 100 50 20 10 5 2 1 dc current gain : h fe collector current : i c (a) fig.1 dc current gain vs.collector current ta = 100 c 25 c ? 40 c l c /l b = 10 ? 10 ? 100 ? 1m ? 20 ? 200 ? 2m ? 50 ? 500 ? 5m ? 10m ta = 100 c 25 c ? 40 c ? 500m ? 200m ? 100m ? 50m ? 20m ? 10m ? 5m ? 2m ? 1m ? 1 collector saturation voltage : v ce(sat) (v) collector current : i c (a) fig.2 collector-emitter saturation voltage vs.collector current
3/3 ldta144tet1g leshan radio company, ltd. notes: 1.dimensioning and tolerancing per ansi y14.5m, 1982. 2.controlling dimension: millimeters 3.maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4.463c-01 obsolete, new standard 463c-02. sc-89
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